By Ayman Fayed
This ebook is dedicated to the topic of adaptive recommendations for shrewdpermanent analog and combined sign layout wherein totally useful first-pass silicon is feasible. To our wisdom, this is often the 1st booklet dedicated to this topic. The strategies defined may still bring about quantum development in layout productiveness of advanced analog and combined sign platforms whereas considerably slicing the spiraling charges of product improvement in rising nanometer applied sciences.
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Additional info for Adaptive Techniques for Mixed Signal System on Chip (The International Series in Engineering and Computer Science)
If the body effect is to be ignored, then Į has to be assumed unity. Using Eqs. 2-12 and 2-13, Eq. 2-10 yields: VC VD ID P oCox W / L ³ V G VTO DVC dVC (2-14) VC VS The transistor is said to be in the triode region of operation as long as VD is less than the channel saturation voltage VCsat = (VG – VTO) / Į. In that case, by integrating Eq. 2-14, the drain current is represented by: ID K / 2D > VG VTO DVS 2 VG VTO DVD 2 @ (2-15) where K = µo Cox (W / L). When the drain voltage is higher than VCsat, the channel pinches at a lower voltage than VD and the transistor is said to be in the saturation region.
M. Geelen, “An Inherently Linear and Compact MOST-Only CurrentDivision Technique,” IEEE Journal of Solid-State Circuits, vol. 27, No. 6, PP. 1730-1735, Dec. 1992. 7. Mohammed Ismail, Terri Fiez, “Analog VLSI Signal and Information Processing,” McGraw-Hill, New York, 1994. 8. H. Wallinga and K. Bult, “Design and Analysis of CMOS Analog Processing Circuits by Means of a Graphical MOST Model,” IEEE Journal of Solid-State Circuits, vol. 24, No. 3, PP. 672-680, Jun. 1989. 9. N. I. Khachab and M. Ismail, “Linearization techniques for nth-order sensor models in MOS VLSI technology,” IEEE Trans.
C. H. Cheng and C. Toumazou, “Linear composite MOSFETS (COMFET),” Electronics Letters, PP. 1802-1804, Sept. 1991. 17. E. Seevinck and R. F. Wassenaar, “A versatile CMOS linear transconductor/square-law function circuit,” IEEE Journal of Solid-State Circuits, vol. SC-22, PP. 366-377, Jun. 1987. 18. S. C. Huang and M. Ismail, “Linear tunable COMFET transconductors,” Electronics Letters, vol. 29, PP. 459-461, Mar. 1993. Chapter 3 TUNABLE ELEMENTS Tunable elements are essential for any adaptive architecture to operate successfully.
Adaptive Techniques for Mixed Signal System on Chip (The International Series in Engineering and Computer Science) by Ayman Fayed